VERTICAL METAL-SEMICONDUCTOR MICRORESONATOR PHOTODETECTING DEVICE AND PRODUCTION METHOD THEREOF

摘要

In order to detect an incident light, at least one element comprising a semiconductor material (6) and at least two electrodes (4) surrounding said element are formed on an insulating layer (2) that does not absorb said light. The element-electrode assembly is capable of absorbing said light and is dimensioned to augment luminous intensity in relation to the incident light by especially causing a surface plasmon mode to resonate between the interfaces of the assembly with the layer and the propagating medium of the incident light, the resonance of said mode taking place at the interface between the element and at least one of the electrodes, said mode being excited by the light magnetic field component parallel to the electrodes. The invention can be used in optical telecommunications.