| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a liquid crystal manufacturing device with which a production yield equivalent to or more than the conventional method is obtained wit the process number and the manufacturing time fewer than before. SOLUTION: A gate electrode, a gate insulating layer, an amorphous silicon semiconductor layer, an ohmic contact layer, a source, and a drain electrode are laminated sequentially and patterned on an insulated substrate, then an etching remove of the ohmic contact layer of the channel portion is performed, a passivation film is laminated and a patterning is further performed. In this manufacturing method of liquid crystal display device, the insulated substrate is purged by an inert gas before or after heating the insulated substrate. After forming the gate insulating film in a monolyaer, the semiconductor layer is formed continuously.</p> |
