发明名称 Atmospheric pressure inductive plasma apparatus
摘要 An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.
申请公布号 US2001008229(A1) 申请公布日期 2001.07.19
申请号 US20010768979 申请日期 2001.01.23
申请人 TIMEDOMAIN CVD, INC. 发明人 SELITSER SIMON I.
分类号 B23K10/00;(IPC1-7):B23K10/00 主分类号 B23K10/00
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