发明名称 |
Method and apparatus for manufacturing semiconductor device |
摘要 |
A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially in parallel therewith to form thin films on the substrate surface. The film-forming process includes an initial film-forming step for forming a first thin film on the surface of the substrate 11 under a first film-forming conditions and a main film-forming step for forming, on the first thin film acting as a backing layer, a second thin film of a thickness greater than that of the first thin film under a second film-forming condition which differs from the first film-forming condition.
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申请公布号 |
US2001008782(A1) |
申请公布日期 |
2001.07.19 |
申请号 |
US20010758238 |
申请日期 |
2001.01.12 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MATSUYAMA NAOKO;SASAKI SINYA |
分类号 |
H01L21/31;C23C16/02;C23C16/40;C23C16/44;C23C16/455;H01L21/00;H01L21/316;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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