METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR TRANSISTOR COMPONENT ELEMENT AND A VERTICAL SEMICONDUCTOR TRANSISTOR COMPONENT
摘要
According to the invention, a double gate MOSFET semiconductor layer structure is formed on a substrate (1). This structure is comprised of a first and of a second gate electrode (10A, 10B) between which a semiconductor channel layer zone (4A) is embedded, and of a source region (2A) and a drain region (2B) which are arranged on opposite faces of the semiconductor channel layer zone (4A). At least one additional semiconductor channel layer zone (6A) is provided on one of the gate electrodes (10B). The faces of the at least one additional semiconductor channel layer zone are also contacted by the source region (2A) and drain region (2B).
申请公布号
WO0106542(A3)
申请公布日期
2001.07.19
申请号
WO2000DE02316
申请日期
2000.07.17
申请人
INFINEON TECHNOLOGIES AG;SCHULZ, THOMAS;ROESNER, WOLFGANG;FRANOSCH, MARTIN;SCHAEFER, HERBERT;RISCH, LOTHAR;AEUGLE, THOMAS
发明人
SCHULZ, THOMAS;ROESNER, WOLFGANG;FRANOSCH, MARTIN;SCHAEFER, HERBERT;RISCH, LOTHAR;AEUGLE, THOMAS