| 摘要 |
<p>PROBLEM TO BE SOLVED: To form, on a ceramic substrate with low thermal expansion, a lead-free thick film resistor with a stable resistance which is hard to get affected by transitions of a burning process. SOLUTION: The main component of the thick film resistor is RuO2 and SiO2-B2O3-K2O glass, the composition of which is 60 wt.% <=SiO2<=85 wt.%, 15 wt.%<=B2O3<=40 wt.%, 0.1 wt.%<=K2O<=10 wt.%, and impurities <=3 wt.%, where RuO2 with its specific surface area of 30-80 m/g2 is used, and the condition is appropriate which K2O of 0.8-4 wt.%, with RuO2: 100 wt.%, is fixed onto RuO2. Furthermore, in making a high resistor of 100 kΩ/(square) and more, it is desirable to add glass containing oxide of a transition metal and B2O3 to the thick film resistor, or to add oxide of a transition metal of 5 wt.% and less to the thick film resistor.</p> |
