| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain stable operation and to simplify a patterning process by preventing the diffusion of atoms into copper and preventing the erosion of a copper pattern depending on an etchant when using the copper of low resistivity as conductive materials or electrode materials. SOLUTION: In the structure covering the surface of all wiring members, for which copper is used, with a metal oxide conductor membrane, when forming semiconductor active film copper wiring, a copper wiring pattern is formed through a titanium layer and a structure covering the surface of this copper wiring pattern with the metal oxide conductor membrane is provided. Since all the wiring members, for which copper is used, are made into a laminated wiring pattern structure, all the copper wiring patterns can be simultaneously formed while using one mask. This copper wiring pattern can be utilized for the liquid crystal display device of a thin film transistor driving system or the like.</p> |
