| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic induction transistor having excellent switching characteristics that a gate power required for on/off control is reduced with a super-small loss and high breakdown strength. SOLUTION: An n-type buffer with relatively high concentration is made along one edge of a drift layer (voltage holding region) arrayed in which a thin n-layer (n column layer) 31 and a p-layer (p column layer) 32 are arrayed adjacent to each other with relatively high concentration, and a p-gate layer 31 is arranged at the surface. In this case, the n-type buffer layer is interposed between the p-gate layer and the p-column layer so that the gate layer can be electrically separated from the p-column layer by the n-type buffer layer. Also, the n-type buffer layer is provided with a p-type embedded layer to be connected with low resistance to a source electrode with a source layer, so that a channel region can be arranged between the p-type embedded layer and the p-gate layer. |
