| 摘要 |
A substrate holder and an electrode are arranged facing each other in a vacuum chamber. The electrode is provided with a process gas introduction mechanism and a gas blowoff plate. A substrate is loaded on the substrate holder, the process gas is introduced, and electric power is supplied between the substrate holder and the electrode to generate plasma for etching the substrate surface. At the rear side of the gas blowoff plate in the vacuum chamber, a plurality of magnets is provided at concentric positions. The magnetic field strength resulting from the magnets on the surface of the substrate is made 0 Gauss. By using the magnets in this way and improving the magnets, it is possible to establish a better etching process for various materials to be etched.
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