发明名称 |
HIGH PURITY TANTALUM TARGETS FOR SPUTTERING |
摘要 |
Improved tantalum-containing barrier layers are obtained by sputter depositing tantalum and/or tantalum nitride from a target having a low contaminant level, i.e., a metallic contaminant content below about 30 ppm by weight; or a niobium contaminant content below about 50 ppm by weight, preferably below 10 ppm, a molybdenum content below about 10 ppm by weight, a gold contaminants below about 15 ppm by weight, and a tungsten content below about 10 ppm by weight. Medium time to failure of copper capacitors including these layers is increased over the use of conventional tantalum targets which have higher amounts of contaminants.
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申请公布号 |
WO0029636(A9) |
申请公布日期 |
2001.07.19 |
申请号 |
WO1999US26290 |
申请日期 |
1999.11.05 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SUN, BINXI;CHIANG, TONY;PAVATE, VIKRAM;DING, PEIJUN;CHIN, BARRY;SUNDARRAJAN, ARVIND;HONG, ILYOUNG, RICHARD |
分类号 |
C23C14/06;C23C14/14;C23C14/34;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):C23C14/34;C23C14/16;H01L21/283 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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