| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device improved so as not to deteriorate performance of a MOSFET by a trench isolation. SOLUTION: The inner wall of the trench 5 formed on the surface of a semiconductor substrate 4 is covered with a first semiconductor layer 22. An insulating layer 8 is fomred in the trench 5.
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| 申请公布号 |
JP2001196449(A) |
申请公布日期 |
2001.07.19 |
| 申请号 |
JP20000004485 |
申请日期 |
2000.01.13 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
SHIOZAWA KATSUOMI;OISHI TOSHIYUKI;ABE YUJI;TOKUDA YASUKI |
| 分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
| 代理机构 |
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