| 摘要 |
1,168,536. Semi-conductor treatment. INTERNATIONAL BUSINESS MACHINES CORP. 20 April, 1967 [12 May, 1966], No. 18166/67. Heading H1K. [Also in Division C1] Semi-conductor devices are prepared by epitaxial growth on wafers having planar silicon surfaces. The planar silicon surfaces are obtained by plating a silicon surface and polishing to remove plated metal from high points on the silicon surface (see C1 Division, abridgment). The planar silicon surfaces may be their either etched with hydrogen chloride vapour in hydrogen, or subjected to a hydrogen bake, and then a silicon-arsenic doped epitaxial layer is deposited on the surfaces. The resultant wafer is then Seitl-etched and a stacking fault count recorded. |
