| 摘要 |
PROBLEM TO BE SOLVED: To provide a polymer irregular reflection-inhibiting membrane that can be used for forming the super-ultra fine pattern formation of 64M, 256M, 1G and 4G DRAM, as the yield of these products is increased. SOLUTION: The compound itself to be used as an irregular reflection- inhibitory membrane is designed so that the compound may absorb the beams of wavelength of 193 nm and 248 nm and the polymer may include the chromophore of high absorbance. In addition, in order to impart the moldability, high air-tightness and dissolution resistance to the organic reflection inhibitory membrane, the mechanism that the resin is crosslinked by the ring-opening reaction of the epoxy structure in the resin, when the hard backing is carried out after coating. |
