发明名称 |
Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it |
摘要 |
There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm2/° C..min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient(° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.
|
申请公布号 |
US6261361(B1) |
申请公布日期 |
2001.07.17 |
申请号 |
US20000577252 |
申请日期 |
2000.05.19 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
IIDA MAKOTO;TAMATSUKA MASARO;KIMURA MASANORI;MURAOKA SHOZO |
分类号 |
C30B15/02;C30B15/00;(IPC1-7):C30B15/04 |
主分类号 |
C30B15/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|