METHOD FOR MANUFACTURING ZNO LIGHT EMITTING DEVICE WITH SHORT WAVELENGTH

摘要

PURPOSE: A method for manufacturing a ZnO light emitting device with a short wavelength is provided to obtain prominent light emitting characteristics by depositing a ZnO on a p-type sapphire substrate under a predetermined temperature. CONSTITUTION: A sapphire substrate is formed by using a p-type material. A ZnO layer of an n-type material is deposited on an upper portion of the sapphire substrate under a depositing temperature of 400 degrees centigrade. A lower electrode and an upper electrode are formed on upper portions of the sapphire substrate and the ZnO layer. In the process for forming the sapphire substrate by using the p-type material, an ultra violet emission process is performed on a junction face of the ZnO layer.