| 摘要 |
PURPOSE: An integrated circuit chip structure is provided to incorporate air or another gas in a multi-layer chip as a permanent dielectric medium by supplying a CVD diamond as dielectrics in semi-sacrificial layer and in-layer dielectrics. CONSTITUTION: A permanent cap of CVD diamond(19) is deposited onto the chip. The CVD diamond of the cap(19) is also deposited into the chip structure through the openings in the hard mask(15), selectively sealing off lower interconnection levels from the ambient external to the chip. What is not shown is that by choice of layout the sides of the chip are also sealed. If the CVD diamond cap(19) is deposited in the atmosphere of an inert gas, such as argon or helium, that gas will be sealed within the chip rather than another. A sealed structure provides a more consistent dielectric medium by preventing the introduction of contaminants such as dirt of moisture from outside. The CVD diamond cap(19) also provides improved thermal conductivity, a factor which becomes more important as the structure becomes more complex and increased heat is generated during use. Openings in hard mask(15) provide sufficient access to remove CVD diamond from within the chip, but the deposition of cap(19) into the same openings forms columns(20) which block openings and whose vertical progression into the chip is limited by features(11,8). |
