Production of trenches comprises applying mask layers to a semiconductor wafer, applying a lacquer mask to one mask layer, structuring the recesses in the mask layer and structuring recesses in the other mask layer

摘要

Production of trenches comprises applying first (1) and second (2) mask layers to a semiconductor wafer; applying a lacquer mask to the first mask layer; structuring the recesses in the first mask layer which correspond to the hole pattern of the lacquer mask using a first etching process; and structuring recesses in the second mask layer through the recesses of the first mask layer using a second etching process. Preferred Features: During structuring of the recesses (6) in the first mask layer, the wafer edge is covered.