GROUP III-NITRIDE SEMICONDUCTOR STRUCTURES WITH REDUCED PHASE SEPARATION

摘要

Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAINP layer of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAINP active layer substantially without phase separation, and a third ternary, quaternary or pentenary InGaAINP material layer of an opposite conduction type formed substantially without phase separation.