发明名称 |
Method for polishing surface of semicon-ductor device substrate |
摘要 |
To solve a problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs. |
申请公布号 |
US2001007795(A1) |
申请公布日期 |
2001.07.12 |
申请号 |
US20010754193 |
申请日期 |
2001.01.05 |
申请人 |
KAWAMURA YOSHIO;YASUI KAN;SATO MASAHIKO;KATAGIRI SOUICHI;NAGASAWA MASAYUKI;HARADA KUNIO;OSABE SATOSHI;YAMAGUCHI UI |
发明人 |
KAWAMURA YOSHIO;YASUI KAN;SATO MASAHIKO;KATAGIRI SOUICHI;NAGASAWA MASAYUKI;HARADA KUNIO;OSABE SATOSHI;YAMAGUCHI UI |
分类号 |
B24B37/04;B24B37/30;B24B37/32;B24B41/06;H01L21/304;H01L21/3105;H01L21/321;(IPC1-7):H01L21/302 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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