AN IMPROVED METHOD FOR BURIED ANTI-REFLECTIVE COATING REMOVAL

摘要

A method for manufacturing a semiconductor structure, having a substrate and a gate region thereon, is described that includes removing an anti-reflective coating (ARC) layer over the gate region to improve salicidation of the gate. An anti-reflective coating is formed over the gate region and then a dielectric layer is formed over the anti-reflective coating layer and the substrate. Dielectric spacers are then formed on the substrate, adjacent the gate region and the anti-reflective coating layer, by etching the dielectric layer using a first process that includes selectively removing portions of the dielectric layer on the anti-reflective coating. Utilizing a second, different etching process, the anti-reflective coating over the gate region is selectively removed while preserving the spacers adjacent the gate region. Use of the present invention helps to minimize the dielectric spacer loss along side the gate region during removal of the buried anti-reflective coating, thereby providing a protection to the gate edge during the salicidation.