ETCHING SOLUTION OF INDIUM TIN OXIDE LAYER AND ETCHING METHOD USING THE SAME

摘要

PURPOSE: An etching solution of an indium tin oxide layer and an etching method using the same are provided to improve the productivity by improving an etching speed and reducing a temperature of the etching solution. CONSTITUTION: An etching solution of an indium tin oxide layer is formed with a hydrochloric acid, a ferrous chloride(FeCl3), and a deionized water. The hydrochloric acid corresponds to 15 to 25 weight percents of a total weight of a composition. The ferrous chloride corresponds to 5 to 15 weight percents of the total weight of the composition. The deionized water corresponds to the remaining weight percents of the total weight of the composition.