发明名称 METHOD FOR SEMICONDUCTOR DEVICE MANUFACTURING
摘要 <p>A method is provided for manufacturing, the method including processing a first workpiece (100) in a nitride processing step (105) and measuring a thickness (110) of a field oxide feature (300) formed on the first workpiece (100). The method also includes forming an output signal (115, 160, 175) corresponding to the thickness of the field oxide feature (300). In addition, the method includes feeding back a control signal (125, 170, 185) based on the output signal (115, 160, 175) to adjust processing performed on a second workpiece (100) in the nitride processing step (105) to adjust a thickness of a field oxide feature (300) formed on the second workpiece (100) toward at least a predetermined threshold value (1305).</p>
申请公布号 WO2001050207(A1) 申请公布日期 2001.07.12
申请号 US2000025724 申请日期 2000.09.20
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