| 摘要 |
PURPOSE: A method for a MOS transistor is provided to mitigate the channeling effect and the leakage current characteristic by make amorphous around the surface of a substrate by injecting boron ions having a dose amount of a high concentration with a low energy. CONSTITUTION: The method for forming a MOS transistor forms a device isolation film(30) on a semiconductor substrate. High concentration ions are injected to form an N-well(25). A gate oxide film(35), a gate electrode layer(40) and a mask oxide film(45) are stacked on the resulting surface and are then etched to form a gate. A spacer film(47) is formed at the side of the gate. A photoresist film(50) is stacked on the gate. Boron ions of a low energy and a high concentration are injected into a portion where source/drain regions(55) will be formed to form a continuous pre-amorphization layer on the surface of the substrate.
|
