发明名称 HIGH VOLTAGE GENERATOR OF DRAM USING VOLTAGE TRANSFER SWITCH
摘要 PURPOSE: A high voltage generator is provided to prevent a boosted voltage loss by cutting off the current path to a transistor back-biased, to variably adjust a capacitance of a capacitor according to a load of a high voltage terminal, and to increase a density. CONSTITUTION: The high voltage generator includes a plurality of transistors(MD1-MD5), a plurality of capacitors(C10,C11,C13,C15), programming capacitors(C12,C14) and fuses(F1,F2). The transistors functions diodes and connects a supply voltage with a high voltage terminal. The capacitors connected with nodes formed between the transistors. The first input signal(p1) is applied to odd capacitors of the capacitors. The second input signal(p2) is applied to even capacitors of the capacitors and has a phase different from the first signal. The programming capacitors connect with the fuses in series. The programming capacitors and the fuses connect parallel with the capacitors connected with the transistors adjacent to the supply voltage terminal. The fuses are selectively connected or cut according to the load quantity of the supply voltage terminal.
申请公布号 KR20010065790(A) 申请公布日期 2001.07.11
申请号 KR19990065733 申请日期 1999.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUN, CHUN U
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
代理机构 代理人
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