METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a capacitor is to form an oxide layer of SiON on a surface of a lower electrode using a prescribed cleaning process, while forming oxide layer having a work function greater than that of the lower electrode, thereby improving a leakage current characteristic of an Al2O3 capacitor. CONSTITUTION: A junction region(2) and an insulating layer(3) are sequentially formed on a semiconductor substrate(1) and a contact hole is formed therein exposing the junction region. A lower electrode(5) is then formed on the entire surface including the contact hole to be connected with the junction region, and then a thin oxide layer(6) of SiON is formed thereon with a cleaning process using HF and SC1 as a cleaning solution. A nitride layer(7) is then formed on the oxide layer. Thereafter, a dielectric layer(8) of Al2O3 is deposited on the entire surface including the nitride layer, followed by depositing an upper electrode(9) thereon.