| 摘要 |
PURPOSE: A method for forming a storage electrode is to improve electric characteristics of a semiconductor device by evenly forming an upper portion of a cylinder type storage electrode. CONSTITUTION: An interlayer dielectric(22) having a storage electrode contact hole is formed on a semiconductor substrate(21). A storage electrode conductive layer is formed on the entire structure. A stacked structure are formed on the storage electrode conductive layer. The stacked structure consists of the first etching stop layer and an anti-reflection layer. A photoresist pattern is formed on the anti-reflection layer. The stacked structure is etched by using the photoresist pattern as an etching mask, and then the photoresist pattern is removed. The second etching stop layer is formed on the entire structure. A spacer is formed by etching the second etching stop layer. The storage electrode conductive layer is partially removed by using the spacer as an etching mask. A cylinder typer storage electrode(28) is formed by removing the storage electrode conductive layer, using the spacer as an etching mask.
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