MEMORY REPAIR CIRCUIT USING MOS STRUCTURE ANTI-FUSE

摘要

PURPOSE: A memory repair circuit using a MOS structure anti-fuse is provided to repair erroneous cell by manufacturing the anti-fuse with MOS transistors and by programming the anti-fuse adequately. CONSTITUTION: The memory repair circuit includes a plurality of anti-fuse devices(10), a latch and a redundancy block(50). The anti-fuse devices are programmed when a source voltage is applied on the first electrode and a negative voltage is applied on the second electrode. The latch detects the program state of the anti-fuse device and latches the result. The redundancy block replaces the erroneous cell with the redundancy cell according to the output of the latch. The memory repair circuit further includes an address multiplexer as well as a voltage generator. The address multiplexer selects the anti-fuse device. The voltage generator supplies the negative voltage to the second electrode of the anti-fuse device.