| 摘要 |
PURPOSE: A method for driving a liquid crystal of a SLV is provided to solve the problem like a cell scale-down limit and a performance degradation and a complicated fabrication process generated due to a high driving voltage. CONSTITUTION: A field oxide(32) is formed on a single crystalline silicon substrate(31), and a gate electrode(33) is formed by intervening a gate insulation film on the single crystalline silicon substrate where the field oxide is not formed. A source/drain impurity diffusion region is formed in the surface of the silicon substrate on both sides of the gate electrode. Then, a capacitor is formed by stacking a bottom electrode(35) and a dielectric film and a top electrode(36) on the field oxide. And, the first interlayer insulation film(37) is formed on the silicon substrate including the capacitor, and the first metal interconnect line(38) connected with the source/drain impurity region and the top electrode of the capacitor is formed on the first interlayer insulation film. Then, the second interlayer insulation film(39) is formed, and the second metal interconnect line(40) is formed on the second interlayer insulation film. And, the third interlayer insulation film(41) is formed on the silicon substrate including the second metal interconnect line. Then, a pixel electrode(43) and an ITO electrode(45) connected with the first metal interconnect line through a conductive plug(44) are formed on the third interlayer insulation film, and an LC(Liquid Crystal)(44) is formed between the pixel electrode and the ITO electrode. |
