METHOD OF ION IMPLANTATION FOR CONTROLLING VCC RESISTANCE

摘要

PURPOSE: A method of ion implantation for controlling a Vcc resistance is provided to prevent a yield-drop effect by forming constantly a resistance value. CONSTITUTION: A drive transistor is formed by laminating a poly 1(20) on a semiconductor substrate(10). A contact hole is formed by laminating an interlayer dielectric(25) thereon and performing a masking etching process. A poly 3(35) is buried into the contact hole. A photoresist layer is laminated on a part except for the contact hole. An implantation portion(50) is formed by implanting ions(45) according to a predetermined angle. The poly 3(35) is deposited under a temperature of 500-800 degrees centigrade and a pressure of 100-500mTorr by using SiH4 gas and N2 gas.