| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce bit line capacitance and to reduce sensing and restoring time by adjusting a control signal. CONSTITUTION: The semiconductor memory device takes the shared sense amplifier structure in which two cell array blocks(110,120) share one sense amplifier, and includes a global bit line(global bl, global /bl) and a plurality of sub bit lines(sub_Array(512wl)). The global bit line is connected with the sense amplifier by the first transistor which responds to a bit line isolation signal generated when one cell array block is selected by a block select address signal. The sub bit lines connects the global bit line with each of the cells. The bit line isolation signal, connecting the global bit line and the sense amplifier through a transistor, disconnects the global bit line from the sense amplifier for a predetermined period of time after loading the cell data selected by the word line on the sub bit line.
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