| 摘要 |
PURPOSE: A method for preventing a noise of an MML(Memory Merged Logic) semiconductor device is provided to reduce a malfunction and a noise of a memory device by preventing the immigrant of electrons and holes to a memory region. CONSTITUTION: An N-well guard ring region(20) and a P-well guard ring region(30) are formed on a boundary between a logic region(15) and a memory region(40) of a semiconductor substrate(10). An N+ active region(25) and a P+ active region(30) are formed on the N-well guard ring region(20) and the P-well guard ring region(30). A Vcc is applied to the N-well guard ring region(20) in order to capture electrons immigrated from the logic region(15). A Vss is applied to the P-well guard ring region(30) to capture holes immigrated from the logic region(15).
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