发明名称 ELECTRONIC DEVICE HAVING TRANSPARENT CONDUCTIVE FILM
摘要 PROBLEM TO BE SOLVED: To solve a problem of corrosion of an Al conductive film by the etchant for a transparent conductive film and a problem of galvanic corrosion due to direct contact between an Al conductive film and a transparent conductive film in an electronic device having an Al conductive film and a transparent conductive film without using a barrier film. SOLUTION: In an active matrix substrate of a TFT liquid crystal device, a transparent conductive film which constitutes a pixel electrode 1 and a terminal electrode 11 is formed from Ti oxide. The etching gas CF4O2 for the Ti oxide does not etch Al and no galvanic corrosion is caused between the Ti oxide and Al. Therefore, the pixel electrode 1 and the terminal electrode 11 are directly connected to a drain connecting electrode consisting of an Al conductive film, a terminal 10 and a source line 3 without forming a barrier film.
申请公布号 JP2001188240(A) 申请公布日期 2001.07.10
申请号 JP19990373328 申请日期 1999.12.28
申请人 SHARP CORP 发明人 SATO TAKASHI;FUJITA TATSUYA;OGATA HIDETAKE
分类号 G09F9/30;G02F1/1343;H01L21/3205;H01L21/3213;H01L21/768;H01L23/52;H01L29/786;H05K1/09;(IPC1-7):G02F1/134;H01L21/320 主分类号 G09F9/30
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