| 摘要 |
A well region is formed in a semiconductor substrate, the surface of the semiconductor substrate is thermally oxidized to thereby form a device isolation insulating film, impurities are injected into the semiconductor substrate to form a guard ring immediately below the device isolation insulating film and then the RTA is conducted to rapidly heat the semiconductor substrate at a temperature higher than that for thermal oxidation. Thereafter, a MOS transistor and a capacitor are formed by, for example, injecting impurities into the semiconductor substrate and then hydrogen sintering as an interface trapped state lowering treatment is conducted. Since the crystal defects are repaired by the RTA without affecting the impurity profile and the interface trapped state is reduced by the interface trapped state lowering treatment, leak current on the device isolation insulating film is reduced. As a result, it is possible to improve the crystal defects and the interface trapped state on the device isolation insulating film in the semiconductor device, thereby suppressing leak current on the device isolation insulating film and eliminating the influence of RTA on the impurity profile.
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