| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a photoelectric conversion device, where the number of processes required for manufacturing the photoelectric conversion device is few, efficiency is high and manufacturing costs are low, and a manufacturing device can be miniaturized, and the photoelectric conversion device with high photoelectric conversion efficiency. SOLUTION: Hydrogen ions are injected in a layer from the uneven surface of an N-type single-crystal silicon to a depth of 100 nm, then the uneven surface is stuck to an electrode layer 3 on a glass substrate 2. Then, the temperature is heated to 500 deg.C, a gap is formed in the layer of the hydrogen ions, and the single-crystal silicon is separated by the gap, thus forming an N-type single- crystal silicon layer 4 on the electrode layer 3. An essentially intrinsic microcrystal silicon thin-film layer 5 and a P-type microcrystal silicon carbide layer 6 are formed on the N-type single-crystal silicon layer 4 and the microcrystal silicon thin-film layer 5, respectively by the plasma CVD method, and a transparent conductive film 7 is formed on the uppermost surface.</p> |
