REFERENCE VOLTAGE GENERATING CIRCUIT, SEMICONDUCTOR MEMORY, AND ITS BURN-IN METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory in which secular change of resistance values of fuses and wirings of a reference voltage generating circuit is prevented. SOLUTION: A semiconductor memory in which a characteristic is changed with time is previously excluded by providing the semiconductor memory with a burn-in circuit and applying burning voltage to fuses and wirings of a reference voltage generating circuit to which voltage is not applied in a normal operation state.