发明名称 |
Trench thyristor with improved breakdown voltage characteristics |
摘要 |
A MOS-controllable power semiconductor trench device has a gate in the form of a trench which extends through a region of p type silicon into an n type region of low conductivity. A discontinous buried p layer below the bottom of the trench forms part of a thyristor which in operation is triggered into conduction by conduction of a PIN diode which is produced when an accumulation layer is formed in the n type region adjacent to the trench under the action of an on-state gate signal. The device has a high on-state conductivity and is protected against high voltage breakdown in its off-state by the presence of the buried layer. An off-state gate signal causes removal of the accumulation layer and conduction of the PIN diode and the thyristor ceases in safe, reliable and rapid manner.
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申请公布号 |
US6259134(B1) |
申请公布日期 |
2001.07.10 |
申请号 |
US19980112978 |
申请日期 |
1998.07.09 |
申请人 |
MITEL SEMICONDUCTOR LIMITED |
发明人 |
AMARATUNGA GEHAN A. J;UDREA FLORIN |
分类号 |
H01L27/07;H01L29/423;H01L29/745;H01L29/749;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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