METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is to reduce a parasitic capacitance by forming a space instead of fully filling an oxide layer, thereby improving an operation speed. CONSTITUTION: A plurality of interconnections(2) is formed on the first insulating layer(1). The second insulating layer(3) is formed to cover the plurality of the interconnections. The third insulating layer having a space between the interconnections is formed on the second insulating layer. A height of the interconnections is lower than that of the space. The second insulating layer is formed using a plasma enhanced chemical vapor deposition(PECVD) process and has a protrusion(4) disposed on an upper edge of the interconnections. The third insulating layer is formed using a high density plasma(HDP) process.