| 摘要 |
PURPOSE: A via hole and a contact hole of a semiconductor device and a method for forming the same are provided to increase an alignment margin by forming a via hole or a contact hole with an upper portion of a predetermined diameter and a lower portion of a smaller diameter. CONSTITUTION: A metal line(20,30,40) including a titanium nitride layer(20), an aluminium layer(30), and a titanium nitride layer(40) is formed on a lower interlayer dielectric(10). An upper interlayer dielectric(50) is formed on the metal line(20,30,40). A via hole(60) is formed on the upper interlayer dielectric(50). An upper portion of the via hole(60) has a constant diameter. A diameter of a lower portion of the via hole(60) is reduced according to a predetermined ratio.
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