| 摘要 |
The method comprises forming a recombination centre 150 in the channel region 15 of the transistor by implanting an impurity in the channel region. Impurities such as inert gases, metals, Group III, IV or V elements may be used after the semi conductor film 100 has been crystallised by laser annealing. The bipolar transistor type behaviour of a conventional thin film transistor in which excessive drain current flows for high drain voltages is prevented by the recombination centre. The impurities, such as phosphorus ions, are implanted through a recess 141 in the gate electrode 14 to form the recombination centre. |
