| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent the degradation of the characteristics of the device by lowering a contact resistance of a metal. CONSTITUTION: A tungsten deposition apparatus comprises the first and the second cooling chamber(201,202) to cool a wafer while loading and unloading the wafer, and also comprises the first and the second deposition chamber(203,204) to perform a deposition and an RF or DC etching chamber(205). A transfer chamber(206) prevents a vacuum breakdown while transferring the wafer to each chamber. The apparatus removes an oxide generated on a TiN surface before depositing a tungsten with an inactive gas plasma in the RF or DC etching chamber, and deposits the tungsten without breaking down the vacuum state in the chamber. According to the method, a contact hole is formed to reveal a part of a silicon layer and then a Ti/TiN is deposited as a barrier metal using a MOCVD method. And a thermal annealing is performed under a nitrogen atmosphere. And, the oxide is removed using the inactive gas plasma like an Ar or a N2 gas in the RF or DC etching chamber. Then, a tungsten is deposited in the first and the second deposition chamber via the transfer chamber.
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