METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A forming method of semiconductor device is provided to prevent short circuit of a bit line with a metal contact plug by restraining the bit line shift. CONSTITUTION: A number of gate electrodes(24) are formed on a semiconductor substrate(100). Each of the gate electrodes(24) includes the first polysilicon film(21), the first silicide film(22) and the first mask oxide film(23). Gate spacers(25) are formed at sides of the gate electrodes(24). The first interlayer insulation film(26) is formed on the whole upper surface including the gate electrodes and the gate spacers(25). An anti-shift film(27) is formed on the first interlayer insulation film(26). A number of bit lines(31) are formed on the whole surface, and bit line spacers(32) are formed at sides of the bit lines(31). Each of the bit lines(31) includes the second polysilicon film(28), the second silicide film(29) and the second mask oxide film(30).