| 摘要 |
PURPOSE: A method for planarizing a semiconductor device is provided to form a uniform interlayer dielectric for a metal interconnection and to prevent the metal interconnection from being exposed in an edge portion, by using silicon-rich oxide layer as a polishing stop layer to perform a planarization process. CONSTITUTION: A metal interconnection(22) is formed on a wafer. An insulation layer(24) is formed on the wafer to fill a gas between adjacent metal interconnections. A silicon-rich oxide layer is formed as a polishing stop layer(26). An interlayer dielectric for planarization is formed on the oxide layer. The interlayer dielectric is polished for planarization until the polishing stop layer is exposed by using ceria-based slurry.
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