METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FOR PREVENTING ARCING PHENOMENON IN WAFER EDGE REGION

摘要

PURPOSE: A method for manufacturing a semiconductor device for preventing an arcing phenomenon in a wafer edge region is provided to control particles caused by an arcing phenomenon, by preventing an arcing phenomenon in the wafer edge region when an interlayer dielectric is etched to form a contact hole. CONSTITUTION: The first interlayer dielectric(41) is formed in a wafer edge region. A dummy conductive layer pattern(42) penetrating the first interlayer dielectric and electrically contacting a wafer(40) is formed. The second interlayer dielectric(43) is formed on the entire structure having the dummy conductive layer pattern. The second interlayer dielectric in a net die region is selectively etched while the wafer is connected to a cathode electrode inside a plasma reactor, so that a contact hole exposing a conductive layer pattern formed in the net die region is formed when the dummy conductive layer pattern is formed.