METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent an electrical short-circuit by forming a plug layer through various planarization processes. CONSTITUTION: A multitude of word line having the first insulating layer sidewall(34) and the second insulating layer(33) is formed on a substrate(31). The third insulating layer is formed on the whole structure. The third insulating layer(36) is etched to expose a part of the substrate(31) for forming a plug layer(39a). A conductive layer for forming a plug is formed on the whole structure. The conductive layer is flattened by using the third insulating layer(36) as an etch-stopper. The conductive layer of the word line is etched by using the second insulating layer(33) as the etch-stopper. A multitude of plug layer(39a) is formed by flattening the third insulating layer(36) and the conductive layer.