发明名称 |
PLASMA PROCESS SYSTEM FOR PROCESSING HARMFUL GAS |
摘要 |
PURPOSE: A plasma process system is provided to process a harmful gas effectively and economically with a low power consumption by increasing a decomposition efficiency, and to prevent the generation of second harmful gas like NOx. CONSTITUTION: A vacuum pump(4) is connected to the system to pull out a harmful gas from an apparatus(2) for fabricating a semiconductor, and the vacuum pump has a connection configuration to supply the exhaust gas to a reactor(6). A pulse generator(8) is connected electrically to the reactor, and makes a corona discharge occur between electrodes by applying a pulse to each electrode. And, a scrubber(10) is connected to purify the harmful gas processed in the reactor.
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申请公布号 |
KR20010063392(A) |
申请公布日期 |
2001.07.09 |
申请号 |
KR19990060463 |
申请日期 |
1999.12.22 |
申请人 |
K.C. TECH CO., LTD. |
发明人 |
PARK, SUN GYU;SIM, SUN YONG;WON, YONG SIK |
分类号 |
H01L21/30;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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