发明名称 PLASMA PROCESS SYSTEM FOR PROCESSING HARMFUL GAS
摘要 PURPOSE: A plasma process system is provided to process a harmful gas effectively and economically with a low power consumption by increasing a decomposition efficiency, and to prevent the generation of second harmful gas like NOx. CONSTITUTION: A vacuum pump(4) is connected to the system to pull out a harmful gas from an apparatus(2) for fabricating a semiconductor, and the vacuum pump has a connection configuration to supply the exhaust gas to a reactor(6). A pulse generator(8) is connected electrically to the reactor, and makes a corona discharge occur between electrodes by applying a pulse to each electrode. And, a scrubber(10) is connected to purify the harmful gas processed in the reactor.
申请公布号 KR20010063392(A) 申请公布日期 2001.07.09
申请号 KR19990060463 申请日期 1999.12.22
申请人 K.C. TECH CO., LTD. 发明人 PARK, SUN GYU;SIM, SUN YONG;WON, YONG SIK
分类号 H01L21/30;(IPC1-7):H01L21/30 主分类号 H01L21/30
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