发明名称 |
IN-PLAIN FIELD SWITCHING MODE LCD AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PURPOSE: An in-plain field switching mode LCD and a manufacturing method of the same are provided to enhance aperture rate and transmittance by varying the material of counter electrodes distributed in pixel spaces into transparent conductor. CONSTITUTION: Gate lines(22) and data lines(26) are arranged to be crossed on a transparent insulating substrate to define pixel spaces. TFTs(30) are distributed near the cross points between the gate lines and data lines. Counter electrodes(24) are distributed in the pixel spaces, and each electrode comprises a pair of first branches(24a), several second branches(24b), first bars(24c) and second bars(24d). The first branches are parallel to the data lines and are distributed on both sides of the pixel space. The second branches are distributed between the first branches to be parallel to the first branches. The first bars connect one ends of the first branches and is functioned as a common electrode line. The second bars are contacted to the first bars while connecting one ends of the second branches. Pixel electrodes(28) are distributed in the pixel spaces, and comprises several third branches(28a) and several third bars(28b) contacted to sources of the TFTs.
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申请公布号 |
KR20010063296(A) |
申请公布日期 |
2001.07.09 |
申请号 |
KR19990060328 |
申请日期 |
1999.12.22 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, JEONG GEUN;LEE, GYEONG HA;PARK, SEUNG IK |
分类号 |
G02F1/136;G02F1/1343;G02F1/1368;G09F9/30;(IPC1-7):G02F1/134 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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