| 摘要 |
PURPOSE: A manufacturing method of capacitor of semiconductor device is provided to simplify manufacturing process by skipping a SOG(Spin On Glass) doping process. CONSTITUTION: Cell transistors are formed on a semiconductor substrate, and an ILD(Inter Layer Dielectric) layer(31) is doped and etched selectively to build a storage node contact hole. A plug layer fills the storage node contact hole. The first anisotropic layer is doped to prevent the ILD layer(31) from damage. Using a PPR(Peri Poly Removal) process, the first anisotropic layer around a circuit region is removed. After defining a pillar gate of storage node, a PE-TEOS (Plasma Enhanced Tetra Ethyl Ortho Silicate) layer is made. The PE-TEOS layer and the first anisotropic layer are etched selectively, and a trench for building a storage node is produced. The side and bottom of trench is coated with the second anisotropic silicon layer, and the second anisotropic silicon layer is erased on the PE-TEOS layer. By removing the PE-TEOS layer in the cell region, the first and the second anisotropic silicon layer have a cylinder shape. Increasing the surface of the patterned first and the second anisotropic silicon layer using a SAES(Surface Area Enhanced Silica Growing) method, storage node layer is constructed(37). After executing additional doping and annealing process, a dielectric layer(38) is formed. Vaporizing polysilicon layer reclaims the gap between the storage node layer(37), and a plate electrode(39) is made.
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