| 摘要 |
PURPOSE: A capacitor forming method in semiconductor device is provided to prevent contact defects between a capacitor and components on a semiconductor substrate by preventing detachment of a capacitor lower electrode through expanding the contact area between the second node storage contact and the capacitor lower electrode and compensating defects of the first storage node contact. CONSTITUTION: The first interlayer dielectric(22) is formed on a semiconductor substrate(21), and a photosensitive film is formed on the first interlayer dielectric(22). The first interlayer dielectric(22) is etched to expose components on the semiconductor substrate(21) to form the first storage node contact(23). The second interlayer dielectric(24), a nitride film(25), the first oxide film(26) and a photosensitive film are formed. The first oxide film(26), the nitride film(25), the second interlayer dielectric(24) and the first storage node contact(23) are etched using the photosensitive film to form the second storage node contact(27). The second oxide film(28) is formed. The second oxide film(28), the first oxide film(26) and the nitride film(25) are etched to expose the second interlayer dielectric(24). A polysilicon layer(29) is deposited. A spin-on-glass is formed on the polysilicon layer(29), and etched back to expose the second oxide film(28). The spin-on-glass, the second oxide film and the first oxide film(26) are removed through wet etching.
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