METHOD FOR MANUFACTURING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to form a metal layer having excellent step coverage and superior capacity for preventing diffusion even in a deep and narrow contact. CONSTITUTION: An interlayer dielectric(11) having an opening part exposing a silicon substrate in a portion for a metal contact is formed. A TiSix(0.1<x<2.0) layer is formed on the resultant structure. A TiSiyN1-y(0.01<y<0.9) layer is formed on the TiSix(0.1<x<2.0) layer. A heat treatment is performed to crystallize the TiSix(0.1<x <2.0) layer. An interconnection metal layer is formed on the resultant structure.