| 摘要 |
PURPOSE: A method of forming a metal line for preventing an agglomeration phenomenon is provided to prevent a twist phenomenon of a lower electrode by minimizing an agglomeration phenomenon of a metal line. CONSTITUTION: An interlayer dielectric(31) is formed on a semiconductor substrate(30). A contact hole is formed to expose a part of the semiconductor substrate(30). A conductive layer for plug is deposited on the interlayer dielectric(31) to bury the contact hole. A plug(32) is formed by etching back the conductive layer. A conductive layer for metal line is deposited on the interlayer dielectric(31). A metal line(33) of a predetermined pattern is formed by etching the conductive layer for metal line. SiF3+ ions(34) are implanted into the metal line. A post-thermal process is performed.
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